BAT54SLT1G, SBAT54SLT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
?C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR
= 10
A)
V(BR)R
30
?
?
V
Total Capacitance
(VR
= 1.0 V, f = 1.0 MHz)
CT
?
7.6
10
pF
Reverse Leakage
(VR
= 25 V)
IR
?
0.5
2.0
Adc
Forward Voltage
(IF
= 0.1 mAdc)
VF
?
0.22
0.24
Vdc
Forward Voltage
(IF
= 1.0 mAdc)
VF
?
0.29
0.32
Vdc
Forward Voltage
(IF
= 10 mAdc)
VF
?
0.35
0.40
Vdc
Forward Voltage
(IF
= 30 mAdc)
VF
?
0.38
0.5
Vdc
Forward Voltage
(IF
= 100 mAdc)
VF
?
0.46
0.8
Vdc
Reverse Recovery Time
(IF
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
trr
?
?
5.0
ns
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak)
is equal to 10 mA.
Notes: 3. tp
? t
rr
+10 V
2 k
820
0.1 F
DUT
VR
100 H
0.1 F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
T
10%
90%
IF
IR
trr
T
iR(REC)
= 1 mA
OUTPUT PULSE
(IF
= I
R
= 10 mA; measured
at iR(REC)
= 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
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